1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1661
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURES
High Voltage : V
CEO
=-120V.
High Transition Frequency : f
T
=120MHz(Typ.).
1W(Monunted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4373.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:80 160, Y:120 240
P
C
* : KTA1661 mounted on ceramic substrate (250mm
2
x0.8t)
D
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-120V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-120
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-5.0
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-5V, I
C
=-100mA
80
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-1.0
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-500mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-100mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
30
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-800
mA
Base Current
I
B
-160
mA
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 6. 15
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KTA1661
Revision No : 2
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
COLLECTOR-EMITTER SATURATION
CE(sat)
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
I - V
C
BE
BE
BASE-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
VOLTAGE V (V)
COLLECTOR POWER DISSIPATION P (W)
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
40
60
80
100
120
140
160
0
0.4
0.6
0.8
1.0
1.2
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm x0.8t)
2 Ta=25 C
2
1
2
Ta=100 C
Ta=25 C
Ta=-25 C
0
-4
0
-8
-12
-16
-20
-200
-400
-600
-800
COMMON EMITTER
Ta=25 C
I =-1mA
B
-2mA
-3mA
-4mA
-5mA
-7mA
-10mA
0mA
-3
-0.02
-10
-30
-100
-300
-1k
-0.05
-0.1
-0.3
-0.5
COMMON EMITTER
I /I =10
B
C
Ta=100
C
Ta=-25 C
Ta=25 C
0
-0.2
-0.2
0
-0.4
-0.6
-0.8
-1.0
-1.2
-0.4
-0.6
-0.8
-1.0
COMMON EMITTER
V =-5V
CE
COMMON EMITTER
V =-5V
CE
Ta=1
00 C
Ta=25
C
T
a=
-25
C
-1
-0.3
-1
-3
-10
-30
-100
-300
-3
-10
-30
-100
-300
-1k
-3k
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX(PULSE)
I MAX
(CONTINUOUS)
C
C
1ms
10ms
100
ms
DC
OP
ER
AT
ION
10
-30
-10
-3
-100
-300
-1k
30
50
100
300
500
1k
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